中紅外超級(jí)LED21系列l(wèi)ed215led218波長(zhǎng)2.13-2.16um2.17-2.19um開(kāi)關(guān)時(shí)間30ns使用溫度-240度至50度TO-18封裝LightEmittingDiodeswithcentralwavelengthMIDIRLED-PR2,15mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.